SKP02N120 Infineon Technologies, SKP02N120 Datasheet - Page 3

no-image

SKP02N120

Manufacturer Part Number
SKP02N120
Description
IGBT NPT 1200V 6.2A 62W TO220-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKP02N120

Package / Case
TO-220-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-220
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKP02N120
Manufacturer:
INF
Quantity:
100
Part Number:
SKP02N120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
SKP02N120XKSA1
Manufacturer:
GREENLIAN
Quantity:
1 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
F
F
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
= 2 A,
=1 5 0 C
F
1 )
1 )
1 )
= 8 00 V , I
1 )
= 8 00 V , I
= 91 ,
= 91 ,
/ d t =2 5 0 A/ s
/ d t =3 0 0 A/ s
3
= 80 0 V, I
= 15 V /0 V ,
= 80 0 V,
= 15 V /0 V ,
=1 8 0n H,
=1 8 0n H,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
= 2 A,
= 2 A,
= 2 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKP02N120
Value
Value
0.16
0.06
0.22
0.10
0.27
0.11
0.38
0.30
typ.
typ.
260
400
290
110
4.2
6.7
23
16
61
50
26
14
85
90
Rev. 2.2
max.
max.
0.21
0.08
0.29
0.33
0.15
0.48
340
350
102
30
21
80
31
17
Sep 07
Unit
ns
mJ
ns
A
A/ s
Unit
ns
mJ
ns
A
A/ s
C
C

Related parts for SKP02N120