IKB03N120H2 Infineon Technologies, IKB03N120H2 Datasheet
IKB03N120H2
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IKB03N120H2 Summary of contents
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... Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 Power Semiconductors 2 for target applications http://www.infineon.com/igbt Marking C off j 0.15mJ 150°C K03H1202 Symbol jmax IKB03N120H2 G P-TO-220-3-45 Package P-TO-220-3-45 Value 1200 C E 9.6 3.9 9.9 9.9 9 -40...+150 220 Rev. 2 Unit ...
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... PCB is vertical without blown air. Power Semiconductors Symbol Conditions Symbol Conditions (one layer thick) copper area for 2 IKB03N120H2 Max. Value Unit 2.0 K/W 3.2 40 Value Unit min. Typ. max. 1200 - - V - 2.2 2 2.0 2.5 - 1.75 - 2 100 205 - Rev. 2.3 May 06 ...
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... =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery IKB03N120H2 Value Unit min. typ. max 281 - - 0.23 - µ 993 - 1180 - Value Unit min. typ. max 340 - - 125 - ns - 0.51 - µ 829 - A/ s ...
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... Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Power Semiconductors Symbol Conditions IKB03N120H2 Value Unit min. typ. max 0. 0.09 - Rev. 2.3 May 06 ...
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... V Figure 2. Safe operating area ( 12A 10A 125°C 25°C Figure 4. Collector current as a function of case temperature (V 15V IKB03N120H2 100 s 500 s DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125°C 150°C ...
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... Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors 10A COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IKB03N120H2 =15V 12V 10V EMITTER VOLTAGE =1.5A C 0°C 50°C 100°C JUNCTION TEMPERATURE Rev. 2.3 May 06 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.09mA IKB03N120H2 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 3A 0°C 50°C 100° ...
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... E 0.16mJ ts 0.12mJ 0.08mJ E off 0.04mJ 0.00mJ 0V/us 125°C 150°C Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig IKB03N120H2 and E include losses on ts due to diode recovery. E off 100 150 200 250 R , GATE RESISTOR ...
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... Figure 17. Typical gate charge (I = 3A) C 1000V 800V C iss 600V 400V C oss 200V C rss 0V 30V Figure 20. Typical turn off behavior, hard switching (V GE Dynamic test circuit in Figure E) 9 IKB03N120H2 U =240V CE U =960V CE 10nC 20nC Q , GATE CHARGE 0.0 0.2 0.4 0.6 0.8 1.0 1 ...
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... T =150°C J 0.4uC 0.3uC T =25°C J 0.2uC 200Ohm 300Ohm 0Ohm Figure 24. Typical reverse recovery charge as a function of diode current slope (V R Dynamic test circuit in Figure E) 10 IKB03N120H2 D=0.5 0 1.9222 7.04E-04 0.02 0.5852 2.02E-04 0.01 0.7168 4.39E-03 R single pulse ...
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... R Dynamic test circuit in Figure E) 3.0V I = 2.0V 1.5V T =25°C J 1.0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IKB03N120H2 T =150° =25°C J 100Ohm 200Ohm R , GATE RESISTANCE G =800V, I =3A, F =2A =1A 0°C 50°C 100°C 150° JUNCTION TEMPERATURE J Rev ...
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... P-TO220-3-45 Power Semiconductors IKB03N120H2 12 Rev. 2.3 May 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IKB03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L öö DUT (Diode ½ L Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IKB03N120H2 14 Rev. 2.3 May 06 ...