IKB03N120H2 Infineon Technologies, IKB03N120H2 Datasheet - Page 4

• Manufacturer Part Number: IKB03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IKB03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-220-3 (Straight Leads)
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parameter
IGBT Characteristic
Turn-off energy
Power Semiconductors
Switching Energy ZVT, Inductive Load
E
Symbol
o f f
V
I
V
R
C
T
T
C
j
j
C C
G E
G
r
= 3 A,
=2 5 C
=1 5 0 C
2 )
= 82 ,
4
= 80 0 V,
= 15 V /0 V ,
=4 nF
Conditions
min.
-
-
IKB03N120H2
Value
0.05
0.09
typ.
Rev. 2.3
max.
-
-
May 06
Unit
mJ