SKB15N60 Infineon Technologies, SKB15N60 Datasheet - Page 2
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SKB15N60
Manufacturer Part Number
SKB15N60
Description
IGBT NPT 600V 31A 139W TO263-3
Manufacturer
Infineon Technologies
Datasheet
1.SKB15N60.pdf
(13 pages)
Specifications of SKB15N60
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB15N60XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SKB15N60
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB15N60
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SKB15N60HS
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB15N60HS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
SMD version, device on PCB
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
collector connection. PCB is vertical without blown air.
2)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
F
G E ( t h )
t h J C
t h J C D
t h J A
i s s
o s s
r s s
G a t e
V
V
T
T
V
T
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
V
V
T
C
G E
G E
j
j
G E
j
j
C E
j
j
C E
C E
C E
G E
C C
G E
G E
C C
j
=2 5 C
=1 5 0 C
=2 5 C
=1 5 0 C
= 40 0 A , V
=2 5 C
=1 5 0 C
2
= 60 0 V, V
= 0V , V
= 20 V , I
= 25 V ,
= 0V , I
= 0V , I
= 0V ,
= 48 0 V, I
= 15 V
= 15 V ,t
= 15 V , I
Conditions
1 5 0 C
Conditions
6 0 0 V,
2
(one layer, 70 m thick) copper area for
C
F
G E
S C
= 1 5 A
= 5 00 A
C
C E
=2 0 V
= 15 A
G E
C
C
=1 5 A
= 15 A
10 s
= V
= 0 V
G E
min.
600
1.7
1.2
3
3
-
-
-
-
-
-
-
-
-
-
-
Max. Value
SKB15N60
Typ.
Value
1.25
10.9
800
150
0.9
1.7
2.3
1.4
40
84
52
76
2
4
7
-
-
-
-
Rev. 2.2
max.
2000
1.65
100
960
101
2.4
2.8
1.8
40
62
99
5
-
-
-
-
Oct. 07
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A