SKB15N60 Infineon Technologies, SKB15N60 Datasheet - Page 3

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SKB15N60

Manufacturer Part Number
SKB15N60
Description
IGBT NPT 600V 31A 139W TO263-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKB15N60

Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
139W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
31 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
31.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKB15N60XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKB15N60
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB15N60
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
SKB15N60A
Manufacturer:
ST
Quantity:
340
Part Number:
SKB15N60HS
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SKB15N60HS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode reverse
recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode reverse
recovery.
T
V
d i
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 5 0 C
=1 5 0 C
F
1 )
1 )
1 )
1 )
= 2 00 V , I
= 2 00 V , I
= 21 ,
= 21 ,
/ d t =2 0 0 A/ s
/ d t =2 0 0 A/ s
3
= 40 0 V, I
= 0/ 15 V ,
= 40 0 V, I
= 0/ 15 V ,
= 18 0 nH ,
= 25 0 pF
= 18 0 nH ,
= 25 0 pF
Conditions
Conditions
F
F
C
C
= 1 5 A,
= 1 5 A,
= 1 5 A,
= 1 5 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB15N60
1020
Value
0.30
0.27
0.57
Value
0.45
0.41
0.86
typ.
typ.
234
279
254
390
180
261
360
320
200
5.0
7.5
32
23
46
28
31
23
54
40
Rev. 2.2
max.
max.
0.36
0.35
0.71
0.54
0.53
1.07
281
313
38
28
55
38
28
65
-
-
-
-
-
-
-
-
-
-
-
-
Oct. 07
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s

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