SGB15N120 Infineon Technologies, SGB15N120 Datasheet - Page 5

• Manufacturer Part Number: SGB15N120
• Description: IGBT NPT 1200V 30A 198W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 198W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N120XT

Power Semiconductors
50A
40A
30A
20A
10A
Figure 7. Typical transfer characteristics
(V
50A
40A
30A
20A
10A
0A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
T
CE
J
=-40°C
T
1V
V
V
,
J
=+25°C
GE
COLLECTOR
G E
,
=17V
5V
15V
13V
11V
T
GATE
9V
7V
2V
J
=+150°C
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
50A
40A
30A
20A
10A
Figure 6. Typical output characteristics
(T
0A
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
G E
COLLECTOR
j
,
JUNCTION TEMPERATURE
=17V
0°C
15V
13V
11V
9V
7V
2V
3V
SGB15N120
-
50°C
EMITTER VOLTAGE
4V
100°C
Rev. 2_2
5V
I
6V
I
I
C
150°C
C
C
=7.5A
=30A
=15A
Apr 07
7V