SGB15N120 Infineon Technologies, SGB15N120 Datasheet - Page 7

• Manufacturer Part Number: SGB15N120
• Description: IGBT NPT 1200V 30A 198W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB15N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 198W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB15N120XT

Power Semiconductors
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
14mJ
12mJ
10mJ
CE
4mJ
3mJ
2mJ
1mJ
0mJ
GE
8mJ
6mJ
4mJ
2mJ
0mJ
-50°C
= 800V, V
0A
= +15V/0V, I
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
10A
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
GE
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 15A, R
include losses
include losses
20A
= 800V,
50°C
30A
G
= 33 ,
100°C
G
= 3 3 ,
40A
150°C
E
E
E
ts
on
off
E
E
*
*
on
E
ts
*
*
off
50A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
CE
5mJ
4mJ
3mJ
2mJ
1mJ
0mJ
-1
-2
-3
K/W
K/W
K/W
0
= 800V, V
p
1µs
/ T)
0.05
0.02
D=0.5
0.2
0.01
0.1
*) E
due to diode recovery.
on
10µs
single pulse
and E
R
GE
G
t
p
25
,
= +15V/0V, I
,
j
GATE RESISTOR
100µs
ts
= 150 C,
PULSE WIDTH
include losses
SGB15N120
R
0.09751
0.29508
0.13241
0.10485
R , ( K / W )
1ms
1
C
1
=
C
50
1
Rev. 2_2
/ R
= 15A,
10ms 100ms
1
C
0.67774
0.11191
0.00656
0.00069
2
=
, ( s )
2
/R
E
E
R
2
E
on
75
ts
2
Apr 07
off
*
*
1s