IKW15T120 Infineon Technologies, IKW15T120 Datasheet

IGBT 1200V 30A 110W TO247-3

IKW15T120

Manufacturer Part Number
IKW15T120
Description
IGBT 1200V 30A 110W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW15T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
110W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
30A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
110W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Power Dissipation Pd
110W
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKW15T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKW15T120
Quantity:
8 500
Part Number:
IKW15T120FKSA1
Manufacturer:
JST
Quantity:
3 400
Low Loss DuoPack : IGBT in TrenchStop
Type
IKW15T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation
T
Operating junction temperature
Storage temperature
1
2)
Power Semiconductors
C
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
Approx. 1.0V reduced V
Short circuit withstand time – 10 s
Designed for :
TrenchStop and Fieldstop technology for 1200 V applications
offers :
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
= 15V, V
1200V, T
and 0.5V reduced V
- Frequency Converters
- Uninterrupted Power Supply
- very tight parameter distribution
- high ruggedness, temperature stable behavior
CC
j
®
1200V
1200V, T
150 C
V
CE
p
limited by T
p
j
15A
limited by T
2)
CE(sat)
F
I
C
with soft, fast recovery anti-parallel EmCon HE diode
compared to BUP313D
150 C
V
1
CE(sat),Tj=25°C
for target applications
jmax
1.7V
jmax
CE(sat)
TrenchStop Series
150 C
1
T
j,max
http://www.infineon.com/igbt/
®
Marking Code
and Fieldstop technology
®
K15T120
Symbol
V
I
I
-
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
S C
j
s t g
C E
G E
t o t
PG-TO-247-3-21
Package
-40...+150
-55...+150
IKW15T120
Value
1200
110
30
15
45
45
30
15
45
10
20
Rev. 2.2 May 06
PG-TO-247-3-21
G
V
A
V
W
Unit
C
s
C
E

Related parts for IKW15T120

IKW15T120 Summary of contents

Page 1

... Power Semiconductors ® TrenchStop Series ® and Fieldstop technology CE(sat) 1 for target applications http://www.infineon.com/igbt Marking Code CE(sat),Tj=25°C j,max 1.7V K15T120 150 C Symbol jmax jmax IKW15T120 PG-TO-247-3-21 Package PG-TO-247-3-21 Value Unit 1200 110 W -40...+150 C -55...+150 Rev. 2.2 May 06 ...

Page 2

... Integrated gate resistor Power Semiconductors ® TrenchStop Series - Symbol Conditions Symbol Conditions . IKW15T120 260 Max. Value Unit 1.1 K/W 1.5 40 Value Unit min. typ. max. 1200 - - V - 1.7 2 1.7 2 1.7 - 5.0 5 100 none Ω Rev. 2.2 May 06 ...

Page 3

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series = Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW15T120 - 1100 - pF - 100 - - Value Unit min. typ. max 520 - - 140 - ns - 1.9 - µ 230 - A/ s Rev. 2.2 May 06 ...

Page 4

... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors ® TrenchStop Series =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery IKW15T120 Value Unit min. typ. max 600 - - 120 - - 330 - ns - 3.4 - µ 190 - A/ s Rev. 2.2 May 06 ...

Page 5

... Power Semiconductors ® TrenchStop Series 10A 1A 0,1A 10kHz 100kHz 1V Figure 2. Safe operating area = 600V 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 5 IKW15T120 DC 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125°C ...

Page 6

... TrenchStop Series 40A V 30A 20A 10A Figure 6. Typical output characteristic 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50°C 8V 10V 12V Figure 8. Typical collector-emitter 6 IKW15T120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150°C) j 0°C 50°C 100° JUNCTION TEMPERATURE ...

Page 7

... Figure 10. Typical switching times as a =56Ω -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =600V, =56Ω IKW15T120 t d(off GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =15A Dynamic test circuit in Figure E) 0°C 50°C 100° ...

Page 8

... G 6mJ 5mJ 4mJ E ts 3mJ 2mJ E off 1mJ E on 0mJ 150°C 400V V Figure 16. Typical switching energy losses =600V, =56Ω IKW15T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =15A Dynamic test circuit in Figure E) ...

Page 9

... V CE Figure 18. Typical capacitance as a function 125A 100A 75A 50A 25A 0A 16V 12V V Figure 20. Typical short circuit collector = 25° IKW15T120 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage ( V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 10

... Figure 22. Typical turn off behavior = 150 K 1.73*10 -2 2.75*10 -3 2.57* 2.71* K/W 10ms 100ms 10µs Figure 24. Diode transient thermal 10 IKW15T120 0.5us 1us 1.5us t , TIME (V =15/0V, R =56Ω 150 Dynamic test circuit in Figure E) D=0.5 0 0.360 7.30*10 0.1 0.477 8.13*10 0.434 1.09*10 0.224 1.55*10 0. 0.02 0. ...

Page 11

... F Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V =600V Dynamic test circuit in Figure E) 11 IKW15T120 T =150° =25°C J 400A/µs 600A/µs 800A/µs DIODE CURRENT SLOPE =15A =25° ...

Page 12

... FORWARD VOLTAGE F Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series 2,0V I =30A F 15A 1, 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 12 IKW15T120 0°C 50°C 100°C , JUNCTION TEMPERATURE J Rev. 2.2 May 06 ...

Page 13

... PG-TO247-3-21 Power Semiconductors ® TrenchStop Series 13 IKW15T120 Rev. 2.2 May 06 ...

Page 14

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 14 IKW15T120 =180nH =39pF. Rev. 2.2 May 06 ...

Page 15

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 15 IKW15T120 Rev. 2.2 May 06 ...

Related keywords