IKW15T120 Infineon Technologies, IKW15T120 Datasheet - Page 6

• Manufacturer Part Number: IKW15T120
• Description: IGBT 1200V 30A 110W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW15T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 110W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
40A
30A
20A
10A
Figure 5. Typical output characteristic
40A
35A
30A
25A
20A
15A
10A
Figure 7. Typical transfer characteristic
0A
5A
0A
0V
0V
V
GE
V
=17V
CE
11V
13V
15V
1V
2V
9V
V
7V
,
( T
(V
COLLECTOR
GE
j
CE
= 25°C)
,
T
=20V)
GATE-EMITTER VOLTAGE
2V
J
4V
=150°C
25°C
3V
6V
-
EMITTER VOLTAGE
4V
8V
5V
10V
6V
TrenchStop Series
12V
6
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
40A
30A
20A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
®
0A
-50°C
0V
V
V
GE
CE
=17V
( T
saturation voltage as a function of
junction temperature
( V
T
,
11V
15V
13V
1V
COLLECTOR
J
9V
7V
j
GE
,
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
EMITTER VOLTAGE
3V
IKW15T120
50°C
4V
Rev. 2.2 May 06
5V
100°C
I
I
I
I
C
C
C
C
6V
=5A
=8A
=30A
=15A