IRG4PSH71U International Rectifier, IRG4PSH71U Datasheet

IGBT UFAST 1200V 99A SUPER-247

IRG4PSH71U

Manufacturer Part Number
IRG4PSH71U
Description
IGBT UFAST 1200V 99A SUPER-247
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PSH71U

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 70A
Current - Collector (ic) (max)
99A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*IRG4PSH71U

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INSULATED GATE BIPOLAR TRANSISTOR
• UltraFast switching speed optimized for operating
• Generation 4 IGBT design provides tighter
• Industry-benchmark Super-247 package with
• Creepage distance increased to 5.35mm
Benefits
www.irf.com
Features
• Generation 4 IGBT's offer highest efficiencies
• Maximum power density, twice the power
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
Absolute Maximum Ratings
V
I
I
I
I
V
E
P
P
T
T
Thermal / Mechanical Characteristics
R
R
R
Wt
C
C
CM
LM
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
higher power handling capability compared to
handling of the TO-247, less space than TO-264
multiple, paralleled IGBTs
same footprint TO-247
available
prior generations
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Parameter
Parameter
d
g
G
n-channel
20 (2.0)
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
IRG4PSH71U
E
C
SUPER - 247
-55 to +150
6 (0.21)
UltraFast Speed IGBT
Max.
Typ.
1200
0.24
200
200
±20
150
350
140
–––
–––
99
50
V
@V
CE(on) typ.
V
GE
CES
Max.
= 15V, I
0.36
–––
–––
38
PD - 91685
= 1200V
= 2.50V
C
= 50A
N (kgf)
Units
Units
g (oz.)
°C/W
mJ
°C
W
V
A
V
1

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IRG4PSH71U Summary of contents

Page 1

... Weight www.irf.com G n-channel Parameter ™ 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– ––– 20 (2.0) ––– 91685 IRG4PSH71U UltraFast Speed IGBT 1200V CES V = 2.50V CE(on) typ 15V 50A SUPER - 247 Max. Units ...

Page 2

... IRG4PSH71U Electrical Characteristics @ T Parameter Collector-to-Emitter Breakdown Voltage V (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current ...

Page 3

... I=I RMS 1000.0 100 150°C 10.0 1.0 0 GE, Gate-to-Emitter Voltage (V) Fig Typical Transfer Characteristics IRG4PSH71U For both: Duty cycle : 50 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 58W 100 ) 25° 50V < 60µs PULSE WIDTH ...

Page 4

... IRG4PSH71U 100 100 Junction Temperature (°C) Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE 0.0001 ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V 15V 380µs PULSE WIDTH 3 ...

Page 5

... Fig Typical Gate Charge vs. 1000 5.0 Ω 15V 960V 100 10 1 -60 -40 - Fig Typical Switching Losses vs. IRG4PSH71U 100 200 300 Q G, Total Gate Charge (nC) Gate-to-Emitter Voltage 140A 70A 35A 100 120 140 160 Junction Temperature (°C) Junction Temperature 400 ...

Page 6

... IRG4PSH71U 5.0 Ω 150° 15V 960V Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 20V 125° 100 10 1 100 120 140 1 SAFE OPERATING AREA 10 100 1000 Collector-to-Emitter Voltage (V) Fig Turn-Off SOA www.irf.com 10000 ...

Page 7

... Clamped Inductive Load Test Circuit 50V 1000V Ã 10 90% 10 d(on) www.irf.com D.U. D.U.T. Driver 90% t d(off t=5µ off off IRG4PSH71U 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4PSH71U Super-247™ (TO-274AA) Package Outline 16.10 [.632] A 3.00 [.118] 15.10 [.595 2.00 [.079] 20.80 [.818] 19.80 [.780 14.80 [.582] 4.25 [.167] 13.80 [.544] 3.85 [.152] 1.60 [.062] 3X 1.45 [.058] 5.45 [.215] 2X 0.25 [.010] Super-247™ (TO-274AA)Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ...

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