IRG4PSH71U International Rectifier, IRG4PSH71U Datasheet - Page 5

• Manufacturer Part Number: IRG4PSH71U
• Description: IGBT UFAST 1200V 99A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71U

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 70A
• Current - Collector (ic) (max): 99A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4PSH71U

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Fig. 9 - Typical Switching Losses vs. Gate
14000
12000
10000
8000
6000
4000
2000
25
20
15
10
0
0
1
V
V GE = 15V
T J = 25°C
I C = 70A
CC = 960V
Fig. 7 - Typical Capacitance vs.
Cies
Coes
Cres
V CE , Collector-to-Emitter Voltage (V)
Collector-to-Emitter Voltage
10
R G , Gate Resistance (Ω)
V GE = 0V,
C ies
C res
C oes = C ce + C gc
Resistance
10
= C ge + C gc , C ce
= C gc
20
f = 1 MHZ
100
30
SHORTED
40
1000
1000
100
Fig. 10 - Typical Switching Losses vs.
20
16
12
10
8
4
0
1
-60 -40 -20
0
V CC = 400V
I C = 70A
R G = 5.0 Ω
V GE = 15V
V CC = 960V
Fig. 8 - Typical Gate Charge vs.
Junction Temperature
T J , Junction Temperature (°C)
Gate-to-Emitter Voltage
Q G, Total Gate Charge (nC)
100
0
20
IRG4PSH71U
40
200
60
80 100 120 140 160
I C = 140A
I C = 70A
I C = 35A
300
5
400