IRG4PSH71U International Rectifier, IRG4PSH71U Datasheet - Page 2

• Manufacturer Part Number: IRG4PSH71U
• Description: IGBT UFAST 1200V 99A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71U

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 70A
• Current - Collector (ic) (max): 99A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4PSH71U

IRG4PSH71U
Notes:

‚
ƒ
„
…
Electrical Characteristics @ T
V
V
∆V
V
V
∆V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
E
(BR)CES
(BR)ECS
CE(on)
GE(th)
on
off
tot
TS
ies
oes
res
g
ge
gc
Repetitive rating; pulse width limited by maximumjunction temperature.
2
Repetitive rating: V
V
Pulse width 5.0µs, single shot.
(BR)CES
Pulse width
GE(th)
CC
=80%(V
/∆T
/∆T
J
J
CES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
≤
80µs; duty factor
), V
GE
GE
=20V, L=10µH, R
=20V; pulse width limited by maximum junction temperature (figure 20)
Parameter
Parameter
≤
0.1%.
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 5.0
Ω
(figure 13a)
Ã
Min. Typ. Max. Units
1200
Min. Typ. Max. Units
3.0
19
48
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—
—
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—
—
—
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—
—
—
7280
0.78
2.52 2.70
3.17
2.68
4.77
9.54
14.3 15.8
-9.2
370
120
280
170
390
360
290
72
61
51
70
49
70
25
13
50
—
—
—
—
—
—
—
5000
±100
500
560
390
260
6.0
2.0
24
50
—
—
—
—
—
— mV/°C V
—
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—
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—
—
—
—
—
V/°C V
µA V
nA V
nC V
mJ
mJ
nH Measured 5mm from package
pF V
ns
ns
V
V
V
S
V
V
V
V
V
V
I
V
I
V
Energy losses include "tail"
See Fig. 9, 10, 11, 14
T
I
V
Energy losses include "tail"
V
f = 1.0MHz
I
I
I
C
C
C
C
C
C
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 70A
= 70A, V
= 70A, V
= 150°C, See Fig. 9, 10, 11, 14
= 70A
= 140A
= 70A, T
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 0V
= 30V,
Conditions
= 15V
Conditions
GE
GE
, I
, I
C
C
C
CC
CC
J
C
C
CE
CE
CE
= 250µA
= 1.0A
= 1mA
= 150°C
G
G
C
= 250µA
= 1.0mA
= 960V
= 960V
= 1200V
= 10V
= 1200V, T
= 70A
= 5.0Ω
= 5.0Ω
See Fig.7
See Fig.8
www.irf.com
V
See Fig.2, 5
J
GE
= 150°C
= 15V