IXRH40N120 IXYS, IXRH40N120 Datasheet
IXRH40N120
Specifications of IXRH40N120
Related parts for IXRH40N120
IXRH40N120 Summary of contents
Page 1
... CES ± GES 120V Gon CE GE IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 G Maximum Ratings ± 1200 ± 125° 600 300 ...
Page 2
... M mounting torque d F mounting force with clip C Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ typ 184 24 3.0 0.7 29 ...
Page 3
... 125° Fig. 5 Typ. turn on energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved -40° 350 280 E t 210 ...
Page 4
... recint Fig. 11 Typ. turn on energy and switching times vs. gate resistor, inductive switching with internal diode (Fig. 18) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 140 d(on) ns 120 E 100 off Ω 80 100 G ...
Page 5
... Fig. 16 Typ. transient thermal impedance Ri 0.034 0.048 0.092 τ 0.0001 0.0035 0.02 +15 V IGBT is on DUT DUT Gate Resistor Driver Fig. 18 turn-on/turn-off with internal diode 500 A/µs di /dt F IXRH40N120 0.174 0.075 0.142 0.18 current sensing current sensing ...