IXRH40N120 IXYS, IXRH40N120 Datasheet - Page 4

• Manufacturer Part Number: IXRH40N120
• Description: IGBT 1200V 35A
• Manufacturer: IXYS

Specifications of IXRH40N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 55A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 55A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, (a): 55
• Ic90, Tc=90°c, (a): 35
• Vce(sat), Typ, Tj=25°c, (v): 2.3
• Tf Typ, Tj=125°c, (ns): 46
• Trr Typ, Tj=125°c, (ns): 2100
• Package Style: TO-247
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3364795

IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
E
E
E
E
on
recint
on
on
mJ
mJ
mJ
50
40
30
20
10
30
25
20
15
10
14
12
10
0
8
6
4
2
0
5
0
0
0
0
Fig. 7 Typ. turn on energy and switching times
Fig. 9 Typ. turn on energy and switching times
Fig. 11 Typ. turn on energy and switching times
V
V
R
T
E
J
CE
GE
G
V
V
I
T
C
recint
E
J
= 125°C
CE
GE
= 600 V
= 15 Ω
= ±15 V
on
= 125°C
= 35 A
= 600 V
= ±15 V
vs. gate resistor, inductive switching
with ext. free wheeling diode (Fig. 17)
20
20
20
vs. collector current, inductive switching
with internal diode (Fig. 18)
vs. gate resistor, inductive switching
with internal diode (Fig. 18)
E
E
E
on
on
rec int
40
40
40
60
60
60
R
R
G
I
G
C
t
V
V
I
T
r
C
J
CE
GE
80
80
80
= 125°C
= 35 A
= 600 V
= ±15 V
t
t
t
t
d(on)
t
r
d(on)
r
d(on)
Ω
Ω
A
100
100
150
120
90
60
30
0
140
120
100
80
60
40
20
0
150
125
100
75
50
25
0
ns
ns
ns
t
t
t
E
E
off
off
E
off
mJ
mJ
mJ
4
3
2
1
0
6
4
2
0
3
2
1
0
0
0
0
Fig. 8 Typ. turn off energy and switching times
Fig. 10 Typ. turn off energy and switching times
Fig. 12 Typ. turn off energy and switching times
E
off
V
V
I
T
V
V
R
T
V
V
I
T
E
C
C
J
CE
GE
E
CE
GE
J
G
J
CE
GE
off
off
= 125°C
= 125°C
= 35 A
= 600 V
= ±15 V
= 125°C
= 15 Ω
= 35 A
= 600 V
= ±15 V
vs. gate resistor, inductive switching
with ext. free wheeling diode (Fig. 17)
= 600 V
= ±15 V
20
20
20
vs. collector current, inductive switching
with internal diode (Fig. 18)
vs. gate resistor, inductive switching
with internal diode (Fig. 18)
40
40
40
IXRH 40N120
60
60
60
R
R
t
G
d(off)
G
I
C
80
80
80
t
t
f
t
d(off)
t
t
f
d(off)
f
Ω
A
Ω
100
100
240
160
80
0
800
600
400
200
0
ns
900
600
300
0
ns
ns
4 - 5
t
t
t