IXRH40N120 IXYS, IXRH40N120 Datasheet - Page 5

• Manufacturer Part Number: IXRH40N120
• Description: IGBT 1200V 35A
• Manufacturer: IXYS

Specifications of IXRH40N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 55A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 55A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, (a): 55
• Ic90, Tc=90°c, (a): 35
• Vce(sat), Typ, Tj=25°c, (v): 2.3
• Tf Typ, Tj=125°c, (ns): 46
• Trr Typ, Tj=125°c, (ns): 2100
• Package Style: TO-247
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3364795

IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
Voltage
source
I
RM
60
50
40
30
20
20
16
12
A
V
8
4
0
0.00
0
Fig. 13 Typ. turn off characteristics
Fig. 15 Typical gate charge
Fig. 17
I
RM
100
0.04
external diode (DSEP 30-12)
turn-on/turn-off with
of the internal diode
200
Driver
0.08
V
V
I
T
C
CE
GE
J
300
= -600 V
= 125°C
= ±15 V
= 35 A
V
I
C
CE
Resistor
0.12
Gate
= 120 V
= 35 A
400
di
Q
F
G
/dt
wheeling
diode
Free
0.16
500
A/µs
t
rr
current
sensing
C
Device
under
test
2400
2100
1800
1500
1200
900
ns
t
Voltage
source
Q
Z
thJC
rr
0.45
K/W
0.4
0.3
0.2
0.1
0.0
36
35
34
33
32
31
30
C
0.001
0
Fig. 14 Typ. turn off characteristics
Fig. 16 Typ. transient thermal impedance
Fig. 18
Ri 0.034
τ
0.0001
100
of the internal diode
turn-on/turn-off with internal diode
0.01
Driver
200
0.0035
0.048
+15 V
300
IXRH 40N120
0.1
V
V
T
IGBT
is on
J
CE
GE
Resistor
0.092
= 125°C
0.02
Gate
= -600 V
= ±15 V
400
DUT
DUT
t
0.174 0.075
0.142
di
1
F
500
/dt
IXRH40N120
s
current
sensing
current
sensing
0.18
A/µs
5 - 5
10