BUP213 Infineon Technologies, BUP213 Datasheet - Page 2

• Manufacturer Part Number: BUP213
• Description: IGBT 1200V 32A TO-220
• Manufacturer: Infineon Technologies

Specifications of BUP213

• Package / Case: TO-220AB
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 32A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 32 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP213IN

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
p
limited by T
jmax
jmax
V
V
V
I
I
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
V
C
I
C
j
C E
G E
C C
G E
G
V
CE
= 1 2 5 C
= 1 5 A ,
V
V
=0.6mA , V
= 8 2
CE
GE
GE
=1200V , V
= 2 5 V ,
= 0 V ,
=+15/ - 1 5 V ,
Conditions
=600V,
Conditions
Conditions
=0V , V
=0V , I
=15V, I
V
I
I
V
T
C
c p u l s
j
CE
G E
, T
Symbol
s t g
C
GE
C
=1mA
GE
=15A
=20V
GE
=V
1)
=0V
SIGC25T120C
CE
min.
min.
1200
min.
2.0
4.5
-55 ... +150
-
-
-
-
-
-
-
Value
1200
45
1 )
20
Value
Value
typ.
Value
typ.
1000
typ.
150
400
2.5
5.5
70
55
45
70
max.
max.
max.
480
3.0
6.5
1.9
-
-
-
Unit
°C
Unit
pF
Unit
ns
V
A
A
V
Unit
µA
nA
V