BUP213 Infineon Technologies, BUP213 Datasheet
BUP213
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BUP213 Summary of contents
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Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage ...
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Infineon Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0.35 mA ...
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Infineon Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Infineon Power dissipation tot C parameter: T 150 °C j 220 W 180 P tot 160 140 120 100 Safe operating area ...
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Infineon Typ. output characteristics parameter µ ° 17V 15V 24 I 13V C 11V ...
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Infineon Typ. switching time inductive load , par 600 ± ...
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Infineon Typ. gate charge Gate parameter puls Short circuit safe ...
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Infineon Package Outlines Dimensions in mm Weight: Semiconductor Group 8 BUP 213 Nov-30-1995 ...