BUP314D Infineon Technologies, BUP314D Datasheet - Page 8

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Infineon
Typ. forward characteristics
I
Semiconductor Group
F
parameter: T
I
F
= f ( V
50
40
35
30
25
20
15
10
A
5
0
0.0
F
)
j
0.5
1.0
T
j
=125°C
1.5
2.0
T
j
=25°C
V
V
F
3.0
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= ( t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
BUP 314D
Jul-30-1996
D = 0.50
10
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0