BUP314D Infineon Technologies, BUP314D Datasheet
BUP314D
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BUP314D Summary of contents
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... Low Loss DuoPack : IGBT in TrenchStop with soft, fast recovery anti-parallel EmCon HE diode Approx. 1.0V reduced V CE(sat) and 0.5V reduced V compared to BUP314D F Short circuit withstand time – Designed for : - Frequency Converters - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 1200 V applications ...
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Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors ® TrenchStop Series - 2 IKW25T120 260 Rev. 2.2 Sep 08 ...
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Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...
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Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case 1) Short circuit collector current Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off ...
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Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse ...
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T =80°C C 50A 40A T =110°C C 30A I c 20A I 10A c 0A 10Hz 100Hz 1kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 0.5, ...
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V =17V GE 15V 50A 13V 40A 11V 9V 30A 7V 20A 10A COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristic (T = 25°C) j 70A 60A 50A ...
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I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load, T =150° =600V, V =0/15V, R ...
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E and E include losses on ts due to diode recovery 14,0mJ 12,0mJ 10,0mJ 8,0mJ 6,0mJ 4,0mJ E off 2,0mJ 0,0mJ 10A 20A 30A I , COLLECTOR CURRENT C Figure 13. Typical switching ...
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Q , GATE CHARGE GE Figure 17. Typical gate charge (I = 15µs 10µs 5µs 0µs 12V 14V GATE EMITTETR VOLTAGE GE Figure 19. Short circuit ...
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V CE 600V 400V 200V 1us 0.5us 0us t, TIME Figure 21. Typical turn on behavior (V =0/15V, R =22Ω Dynamic test circuit in Figure E) D=0.5 0 K/W 0.1 0.05 0.02 ...
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DIODE CURRENT SLOPE F Figure 23. Typical reverse recovery time as a function of diode current slope (V =600V, I =25A Dynamic test circuit in Figure E) ...
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T =25°C J 60A 150°C 40A 20A FORWARD VOLTAGE F Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® TrenchStop Series 2,0V I =50A F 25A 1,5V 15A 8A ...
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MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 19.80 4.17 3.50 5.49 6.04 Power Semiconductors ® TrenchStop Series PG-TO247 MAX MIN MAX 5.16 0.193 0.203 2.53 0.089 0.099 2.11 ...
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Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...