FDG6304P Fairchild Semiconductor, FDG6304P Datasheet

FDG6304P

Manufacturer Part Number

FDG6304P

Description

IC FET DGTL P-CHAN DUAL SC70-6

Manufacturer

Fairchild Semiconductor

Type

Small Signalr

Datasheets

1.FDG6304P.pdf (5 pages)

2.FDG6304P.pdf (5 pages)

Specifications of FDG6304P

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.1 Ohm @ 410mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

410mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

1.5nC @ 4.5V

Input Capacitance (ciss) @ Vds

62pF @ 10V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

1.1Ohm

Drain-source On-volt

25V

Gate-source Voltage (max)

Drain Current (max)

410mA

Power Dissipation

300mW

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SC-70

Module Configuration

Dual

Transistor Polarity

P Channel

Continuous Drain Current Id

-410mA

Drain Source Voltage Vds

-25V

On Resistance Rds(on)

1.1ohm

Rds(on) Test Voltage Vgs

-4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDG6304PTR

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Symbol

ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

FDG6304P

Dual P-Channel, Digital FET

DSS

GSS

General Description

These dual P-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. This device has been

designed especially for low voltage applications as a

replacement for bipolar digital transistors and small

signal MOSFETs.

Units inside the carrier can be of either orientation and will not affect the functionality of the device.

The pinouts are symmetrical; pin 1 and 4 are interchangeable.

STG

SC70-6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain/Output Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100 pF / 1500 )

Thermal Resistance, Junction-to-Ambient

SC70-6

SOT-23

- Continuous

- Pulsed

= 25°C unless otherwise noted

SuperSOT

(Note 1)

-6

Features

SuperSOT

-25 V, -0.41 A continuous, -1.5 A peak.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

Compact industry standard SC70-6 surface

mount package.

-8

DS(ON)

1 or 4

FDG6304P

2 or 5

-55 to 150

3 or 6

= 1.1

= 1.5

-0.41

-1.5

415

6.0

-25

0.3

-8

SO-8

@ V

GS(th)

< 1.5 V).

= -4.5 V,

= -2.7 V.

4 or 1

SOT-223

6 or 3

5 or 2

July 1999

FDG6304P Rev.E1

°C/W

Units

°C

Related parts for FDG6304P

FDG6304P Summary of contents

Page 1

... Human Body Model). Compact industry standard SC70-6 surface mount package. TM SuperSOT -6 SuperSOT 25°C unless otherwise noted A (Note 1) (Note 1) July 1999 -4.5 V, DS(ON 1 -2.7 V. DS(ON) GS < 1.5 V). GS(th) SO SOT-223 * FDG6304P -25 -8 -0.41 -1.5 0.3 -55 to 150 6.0 415 * Units °C kV °C/W FDG6304P Rev.E1 ...

Page 2

... A (Note 415 C/W on minimum pad mounting on FR-4 board in still air. JA Min Typ Max - - 55°C -10 J -100 -0.65 -0.82 -1 0.85 1.1 T =125°C 1.2 1.9 J 1.15 1.5 -1.5 0 1.1 1.5 0.31 0.29 -0.25 -0.85 -1.2 is guaranteed JC FDG6304P Rev.E1 Units µA µ ...

Page 3

... DRAIN CURRENT (A) D Figure 2. On-Resistance Variation with Drain Current and Gate Voltage -0. 125 ° GATE TO SOURCE VOLTAGE (V) GS Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 25°CV76 359.52 26.76 m 518.88 21214.9 S 0.2 0.4 0.6 0.8 1 FDG6304P Rev.E1 1.2 25° 359.52 2214.92 l 518.88 2192 359.521974 ...

Page 4

... TIME (sec) 1 Thermal characterization performed using the conditions described in note 1. C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =415 °C/W JA P(pk ( Duty Cycle 100 200 FDG6304P Rev.E1 25 200 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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