FDS6930A Fairchild Semiconductor, FDS6930A Datasheet

MOSFET N-CH DUAL 30V 5.5A 8SOIC

FDS6930A

Manufacturer Part Number
FDS6930A
Description
MOSFET N-CH DUAL 30V 5.5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6930A

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 5V
Input Capacitance (ciss) @ Vds
460pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6930ATR

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© 1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
DSS
GSS
D
J
These N-Channel Logic Level MOSFETs are
produced
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
FDS6930A
Dual N-Channel, Logic Level, PowerTrench
General Description
,T
JA
JC
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
using
SO-8
D1
D2
- Pulsed
SuperSOT
Fairchild
D2
pin 1
TM
-6
T
S1
A
Semiconductor's
= 25
G1
o
C unless otherwise noted
S2
SuperSOT
G2
(Note 1)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
TM
-8
Features
TM
5.5 A, 30 V. R
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
R
High power and current handling capability.
DS(ON)
SO-8
MOSFET
.
R
DS(ON)
DS(ON)
6
5
8
7
FDS6930A
-55 to 150
= 0.055
= 0.040
±20
1.6
0.9
30
5.5
78
40
20
2
1
SOT-223
@ V
@ V
GS
GS
= 4.5 V.
= 10 V
October 1998
1
4
3
2
SOIC-16
FDS6930A Rev.D
Units
°C/W
°C/W
°C
W
W
V
V
A

Related parts for FDS6930A

FDS6930A Summary of contents

Page 1

... DS(ON) High power and current handling capability. TM SO-8 SuperSOT - unless otherwise noted A (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) October 1998 = 0.040 @ DS(ON 0.055 @ V = 4.5 V. DS(ON SOIC-16 SOT-223 FDS6930A 30 ±20 5 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W FDS6930A Rev.D ...

Page 2

... O b. 125 pad of 2oz copper. Min Typ Max 55° 100 -100 1 1 0.032 0.04 T =125°C 0.048 0.068 J 0.044 0.055 20 12 460 115 0.9 1.3 1.2 (Note 135 C 0.003 0.02 in pad of 2oz copper. Units µA µ mV guaranteed FDS6930A Rev.D ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate Voltage 2.5A D 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS6930A Rev 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( =135° C/W JA P(pk ( Duty Cycle 100 300 FDS6930A Rev.D 30 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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