FDS6930A Fairchild Semiconductor, FDS6930A Datasheet - Page 4

• Manufacturer Part Number: FDS6930A
• Description: MOSFET N-CH DUAL 30V 5.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6930A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 5V
• Input Capacitance (ciss) @ Vds: 460pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6930ATR

Typical Electrical Characteristics
0.05
0.01
Figure 9. Maximum Safe Operating Area.
100
0.5
10
Figure 7. Gate Charge Characteristics.
50
10
8
6
4
2
0
2
0.1
0
0.005
0.002
0.001
I
D
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
= 5.5A
SINGLE PULSE
1
R
JA
T
V
A
GS
=135°C/W
A
D = 0.5
=25°C
=10V
2
V
0.5
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
0.05
g
1
0.02
4
Figure 11. Transient Thermal Response Curve.
0.001
0.01
2
Single Pulse
6
5
V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DS
= 5V
10
15V
0.01
8
10V
30
50
10
0.1
t , TIME (sec)
1
1000
500
200
100
50
0.1
30
25
20
15
10
5
0
0.01
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
1
f = 1 MHz
V
GS
0.2
= 0 V
V
DS
0.1
0.5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Dissipation.
P(pk)
10
1
0.5
T - T
Duty Cycle, D = t /t
R
J
R
JA
t
2
1
A
JA
(t) = r(t) * R
t
= P * R
2
=135° C/W
5
10
JA
1
100
R
SINGLE PULSE
(t)
2
JA
JA
T = 25°C
10
A
C iss
C rss
C oss
=135 °C/W
50 100
300
FDS6930A Rev.D
30
300