FDS6930A Fairchild Semiconductor, FDS6930A Datasheet - Page 3

• Manufacturer Part Number: FDS6930A
• Description: MOSFET N-CH DUAL 30V 5.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6930A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 5V
• Input Capacitance (ciss) @ Vds: 460pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6930ATR

Typical Electrical Characteristics
15
12
30
24
18
12
9
6
3
0
6
0
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
1
0
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
1
-50
V
V
DS
GS
I = 5.5A
V
D
=5.0V
GS
=10V
-25
= 10V
1
V
GS
6.0V
2
V
Temperature.
DS
, GATE TO SOURCE VOLTAGE (V)
5.0V
T , JUNCTION TEMPERATURE (°C)
0
J
4.5V
, DRAIN-SOURCE VOLTAGE (V)
4.0V
2
25
T = -55°C
J
3.5V
3
50
3.0V
3
125°C
75
25°C
4
100
4
125
5
5
150
0.15
0.05
0.2
0.1
0.001
0
4
3
2
1
0
0.01
Figure 2. On-Resistance Variation with
2
0.1
0
20
Figure 4. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
1
0
V
V
GS
GS
= 0V
0.2
= 3.0V
V
6
V
SD
GS
4
Drain Current and Gate Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
Variation with Source Current
Gate-to-Source Voltage.
and Temperature.
0.4
I
D
3.5 V
T = 125°C
J
, DRAIN CURRENT (A)
12
0.6
4.0 V
6
25°C
-55°C
0.8
4.5 V
18
125°C
25°C
5.5 V
1
8
24
I = 2.5A
D
10V
1.2
FDS6930A Rev.D
10
1.4
30