NDS9936 Fairchild Semiconductor, NDS9936 Datasheet

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... Dual MOSFET in surface mount package. = 25°C (Note 1a 70°C (Note 1a 25°C A (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1996 = 0. 10V. DS(ON DS(ON NDS9936 30 ± 20 ± 5.0 ± 4.0 ± 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W NDS9936.SAM ...

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... - 250 µ 1.0 MHz GEN Min Typ Max Units 55°C J 100 -100 1 1 =125°C 0.7 1.1 2.2 J 0.044 0.05 T =125°C 0.066 0.1 J 0.066 0.08 T =125°C 0.099 0. 525 pF 315 pF 185 1.5 3.7 NDS9936.SAM V µA µ ...

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... C/W when mounted on a 0.003 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions 1.7 A (Note 0V /dt = 100 A/µ Min Typ Max Units 1.7 0.78 1.2 70 160 is guaranteed NDS9936.SAM ...

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... Figure 6. Gate Threshold Variation with V = 3.5V GS 4.0 4 DRAIN CURRENT (A) D and Drain Current 10V DRAIN CURRENT (A) D Current and Temperature 250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. 5.0 6 .5V 10V 4 .5V 10V 125 150 NDS9936.SAM ...

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... Figure 8. Body Diode Forward Voltage Variation iss oss 2 C rss Figure 10. Gate Charge Characteristics. t d(on Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Current and Temperature 15V GATE CHARGE (nC off t t d(off PULSE W IDTH 1 INVERTED NDS9936.SAM ...

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... Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. (continued 125°C 0.3 0 Figure 14. Maximum Safe Operating Area TIME (sec 10V GS SINGLE PULSE T = 25° DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDS9936.SAM ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...