NDS9936 Fairchild Semiconductor, NDS9936 Datasheet - Page 5
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NDS9936
Manufacturer Part Number
NDS9936
Description
MOSFET 2N-CH 30V 5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9936.pdf
(7 pages)
Specifications of NDS9936
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
525pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9936TR
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Typical Electrical Characteristics
V
GS
1 5 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
Figure 11. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
1.1
0.9
0.1
Figure 7. Breakdown Voltage Variation with
1
-50
I
D
R
0.2
Temperature.
= 250µA
GEN
-25
f = 1 MHz
V
GS
= 0V
V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
50
D
2
S
V
DD
75
R
L
5
(continued)
D U T
100
1 0
C oss
C iss
C rss
125
V
2 0
O U T
150
3 0
V
V
t
O U T
d(on)
IN
0.05
0.02
0.01
1 0
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage Variation
0.5
0.2
0.1
8
6
4
2
0
1 0
1 0 %
5
2
1
0
0.2
with Current and Temperature.
I
V
V
D
2
DS
GS
t
= 5A
= 15V
5 0 %
o n
= 0V
V
0.4
1 0 %
SD
T = 125°C
J
4
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE W IDTH
r
Q
g
6
, GATE CHARGE (nC)
0.6
25°C
8
t
d(off)
0.8
1 0
5 0 %
-55°C
9 0 %
1 2
t
1 0 %
off
9 0 %
1
NDS9936.SAM
1 4
INVERTED
t
f
1.2
1 6