NDS9936 Fairchild Semiconductor, NDS9936 Datasheet - Page 5

• Manufacturer Part Number: NDS9936
• Description: MOSFET 2N-CH 30V 5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9936

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 525pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9936TR

Typical Electrical Characteristics
V
GS
1 5 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.15
1.05
0.95
Figure 11. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
1.1
0.9
0.1
Figure 7. Breakdown Voltage Variation with
1
-50
I
D
R
0.2
Temperature.
= 250µA
GEN
-25
f = 1 MHz
V
GS
= 0V
V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
50
D
2
S
V
DD
75
R
L
5
(continued)
D U T
100
1 0
C oss
C iss
C rss
125
V
2 0
O U T
150
3 0
V
V
t
O U T
d(on)
IN
0.05
0.02
0.01
1 0
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage Variation
0.5
0.2
0.1
8
6
4
2
0
1 0
1 0 %
5
2
1
0
0.2
with Current and Temperature.
I
V
V
D
2
DS
GS
t
= 5A
= 15V
5 0 %
o n
= 0V
V
0.4
1 0 %
SD
T = 125°C
J
4
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE W IDTH
r
Q
g
6
, GATE CHARGE (nC)
0.6
25°C
8
t
d(off)
0.8
1 0
5 0 %
-55°C
9 0 %
1 2
t
1 0 %
off
9 0 %
1
NDS9936.SAM
1 4
INVERTED
t
f
1.2
1 6