NDS9936 Fairchild Semiconductor, NDS9936 Datasheet - Page 6

• Manufacturer Part Number: NDS9936
• Description: MOSFET 2N-CH 30V 5A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9936

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 525pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9936TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
1 2
1 0
8
6
4
2
0
0
0 .0 0 5
0 .0 0 2
0 .0 0 1
0 .0 5
0 .0 2
0 .0 1
Current and Temperature.
0 .5
0 .2
0 .1
0 .0001
1
2
D = 0.5
0.2
I
D
0.1
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
0.05
, DRAIN CURRENT (A)
0 .001
0.02
4
0.01
T = -55°C
Single Pulse
J
depending on the circuit board design.
25°C
6
125°C
0 .0 1
(continued)
8
V
DS
= 1 0 V
1 0
0 .1
t , TIME (sec)
1
0.03
0.01
0.3
0.1
3 0
1 0
3
1
1
Figure 14. Maximum Safe Operating Area.
.
1
SINGLE PULSE
T
V
A
GS
= 25°C
2
= 10V
V
DS
P(pk)
, DRAIN-SOURCE VOLTAGE (V)
3
T - T
Duty Cycle, D = t
1 0
R
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
5
2
= See Note 1c
JA
1
/ t
(t)
JA
1 0 0
2
1 0
3 0 0
NDS9936.SAM
2 0
3 0