FDS6910 Fairchild Semiconductor, FDS6910 Datasheet

MOSFET N-CH DUAL 30V 7.5A 8SOIC

FDS6910

Manufacturer Part Number
FDS6910
Description
MOSFET N-CH DUAL 30V 7.5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6910

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1130pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
36 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6910

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FDS6910
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6910
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
Semiconductor’s
D2
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6910
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
7.5 A, 30 V.
Fast switching speed
Low gate charge
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
7.5
1.6
1.0
0.9
30
20
78
40
20
= 13 m
= 17 m
September 2004
4
3
2
1
@ V
@ V
GS
GS
2500 units
Quantity
FDS6910 Rev BW)
= 10 V
= 4.5 V
Units
C/W
C/W
W
V
V
A
C

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FDS6910 Summary of contents

Page 1

... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ September 2004 DS(ON 4.5 V DS(ON Ratings Units 7 1.6 1.0 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6910 Rev BW) ...

Page 2

... A Test Conditions Min Typ Max Units 250 250 A, Referenced 250 250 A, Referenced 7.5 A,T = 125 7 1.0 MHz mV 1.0 MHz GEN 7 mV 100 1 1 –4.7 mV 1130 pF 300 pF 100 pF 2 3.1 nC 2.7 nC FDS6910 Rev B(W) ...

Page 3

... Pulse Test: Pulse Width < 300 s, Duty Cycle < 2. 25°C unless otherwise noted Test Conditions 1 7 100 A/µ determined by the user's board design 125°C/W when 2 mounted pad copper Min Typ Max Units 1.3 A 1.2 V (Note 135°C/W when mounted on a minimum mounting pad. FDS6910 Rev B(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 4.0 4.5V 5.0 6.0V 10. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6910 Rev B( 1.2 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 1000 FDS6910 Rev B(W) 30 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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