FDS6910 Fairchild Semiconductor, FDS6910 Datasheet - Page 5

• Manufacturer Part Number: FDS6910
• Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1130pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6910

Typical Characteristics
0.01
100
0.1
10
10
1
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.1
0
Figure 7. Gate Charge Characteristics.
R
SINGLE PULSE
DS(ON)
R
0.001
I
D
0.01
JA
V
T
= 7.5A
0.1
GS
A
= 135
0.0001
1
LIMIT
= 25
= 10V
o
o
C
C/W
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
D = 0.5
1
Q
0.2
g
0.1
, GATE CHARGE (nC)
DC
0.05
8
0.001
0.02
10s
0.01
V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DS
SINGLE PULSE
1s
= 10V
Figure 11. Transient Thermal Response Curve.
20V
100ms
12
10ms
10
15V
0.01
1ms
16
100 s
100
20
0.1
t
1
, TIME (sec)
50
40
30
20
10
0
0.001
1400
1200
1000
800
600
400
200
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
rss
0.01
5
C
Power Dissipation.
V
oss
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
1
, TIME (sec)
1
15
P(pk)
Duty Cycle, D = t
T
R
C
J
R
iss
JA
- T
100
JA
(t) = r(t) * R
10
A
t
= 135°C/W
1
20
= P * R
t
2
SINGLE PULSE
R
JA
T
V
A
f = 1MHz
= 135°C/W
GS
JA
= 25°C
100
FDS6910 Rev B(W)
1
JA
(t)
/ t
= 0 V
25
2
1000
1000
30