FDS6910 Fairchild Semiconductor, FDS6910 Datasheet - Page 4

• Manufacturer Part Number: FDS6910
• Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1130pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6910

Typical Characteristics
20
16
12
20
16
12
8
4
0
8
4
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
DS
V
4.5V
GS
V
= 5V
I
D
GS
= 10.0V
0.25
= 7.5A
-25
= 10V
2
V
GS
V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
T
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
A
0.5
= 125
4.0V
2.5
25
3.5V
o
C
0.75
25
50
o
C
3.0V
3
-55
75
1
o
C
100
o
C)
3.5
1.25
125
150
1.5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.04
0.03
0.02
0.01
0.001
0.01
100
0.1
10
0
2.6
2.2
1.8
1.4
0.6
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
0
V
Drain Current and Gate Voltage.
V
GS
T
GS
3.5V
A
= 0V
= 25
= 3.0V
Gate-to-Source Voltage.
0.2
o
V
C
SD
4.0
V
4
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
= 125
0.4
I
D
4.5V
, DRAIN CURRENT (A)
o
C
8
0.6
6
5.0
T
A
25
= 125
o
C
12
o
0.8
C
6.0V
-55
8
o
C
FDS6910 Rev B(W)
16
I
1
D
= 3.8A
10.0V
1.2
20
10