SI7911DN-T1-E3 Vishay, SI7911DN-T1-E3 Datasheet

MOSFET DUAL P-CH 20V 1212-8

SI7911DN-T1-E3

Manufacturer Part Number
SI7911DN-T1-E3
Description
MOSFET DUAL P-CH 20V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7911DN-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
51 mOhm @ 5.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.7A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7911DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7911DN-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 435
Part Number:
SI7911DN-T1-E3
Manufacturer:
VISHAY
Quantity:
464
Part Number:
SI7911DN-T1-E3
Manufacturer:
VISHAY
Quantity:
310
Company:
Part Number:
SI7911DN-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
8
D1
3.30 mm
7
D1
6
0.051 at V
0.067 at V
0.094 at V
http://www.vishay.com/ppg?73257
D2
PowerPAK 1212-8
Bottom View
5
Si7911DN-T1-E3 (Lead (Pb)-free)
Si7911DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
R
DS(on)
J
a
b, c
= 150 °C)
GS
GS
GS
a
1
Dual P-Channel 20-V (D-S) MOSFET
S1
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
2
G1
a
3
S2
3.30 mm
4
G2
a
Steady State
Steady State
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
T
T
T
T
t ≤ 10 s
I
- 5.7
- 5.0
- 4.2
= 25 °C, unless otherwise noted
D
A
A
A
A
(A)
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJC
I
I
thJA
GS
FEATURES
APPLICATIONS
DS
D
S
D
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Portable
stg
Package
- PA Switch
- Battery Switch
- Load Switch
G
1
Typical
®
P-Channel MOSFET
- 5.7
- 4.1
- 2.1
10 s
2.5
1.3
5.6
40
75
Power MOSFETS: 1.8 V Rated
D
- 55 to 150
S
1
1
- 20
- 20
260
± 8
Steady State
Maximum
- 4.2
- 3.0
- 1.1
0.85
1.3
G
50
94
7
2
Vishay Siliconix
P-Channel MOSFET
Si7911DN
www.vishay.com
®
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI7911DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7911DN-T1-E3 (Lead (Pb)-free) Si7911DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7911DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 72340 S-81544-Rev. C, 07-Jul- °C, unless otherwise noted A 1500 1200 0.20 0.16 0.12 0.08 0. °C J 0.00 0.8 1.0 1.2 Si7911DN Vishay Siliconix C 900 iss 600 300 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 ...

Page 4

... Si7911DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com °C, unless otherwise noted 100 125 150 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72340. Document Number: 72340 S-81544-Rev. C, 07-Jul- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7911DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN ...

Page 7

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 8

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 9

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) Vishay Siliconix TSOP-8 PPAK 1212 Dual Single Dual Single ...

Page 10

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 11

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) (0.990) 0.016 (0.405) 0.016 (0.405) 0.026 (0.660) 0.026 (0.660) 0.025 (0.635) Return to Index Return to Index www.vishay.com 1 ® 1212-8 Dual 0.152 (3.860) 0.152 (3.860) 0.068 0.039 0.068 (1.725) (1.725) 0.039 (0 ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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