SI7911DN-T1-E3 Vishay, SI7911DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7911DN-T1-E3
• Description: MOSFET DUAL P-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7911DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7911DN-T1-E3TR

TYPICAL CHARACTERISTICS T
Document Number: 72340
S-81544-Rev. C, 07-Jul-08
0.20
0.16
0.12
0.08
0.04
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
V
D
Source-Drain Diode Forward Voltage
DS
GS
= 5.7 A
On-Resistance vs. Drain Current
0.2
= 10 V
2
= 1.8 V
4
V
SD
T
Q
J
- Source-to-Drain Voltage (V)
g
= 150 °C
0.4
I
- Total Gate Charge (nC)
4
D
Gate Charge
- Drain Current (A)
8
0.6
6
1 2
V
0.8
GS
8
T
J
A
= 25 °C
= 2.5 V
V
= 25 °C, unless otherwise noted
GS
1 6
= 4.5 V
1.0
10
1.2
20
12
1500
1200
0.20
0.16
0.12
0.08
0.04
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
C
On-Resistance vs. Junction Temperature
D
rss
V
I
- 25
D
= 1.1 A
GS
= 5.7 A
= 4.5 V
4
1
V
V
GS
T
0
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
I
8
2
D
= 5.7 A
C
oss
5 0
C
Vishay Siliconix
iss
12
3
7 5
Si7911DN
www.vishay.com
100
16
4
125
150
20
5
3