SI4925BDY-T1-E3 Vishay, SI4925BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4925BDY-T1-E3
• Description: MOSFET P-CH DUAL 30V 5.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4925BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -7.1A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4925BDY-T1-E3TR

Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10 -
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10 -
100
10
1
0.1
2
Limited by R
* V
Limited
125
I
GS
D(on)
Single Pulse
T
> minimum V
A
V
150
= 25 °C
Square Wave Pulse Duration (s)
DS
DS(on)*
-
Safe Operating Area
10 -
Drain-to-Source Voltage (V )
1
1
GS
at which R
BVDSS Limited
DS(on)
10
30
25
20
15
10
1
5
0
10 -
is specified
I
DM
2
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10 -
100
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
1
-
T
Time (s)
t
A
1
S09-0869-Rev. D, 18-May-09
= P
t
2
DM
Document Number: 72001
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 85 °C/W
100
600
600