ZXMHC3A01T8TA Diodes Zetex, ZXMHC3A01T8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMHC3A01T8TA
• Description: MOSFET H-BRIDGE DUAL SOT223-8
• Manufacturer: Diodes Zetex

Specifications of ZXMHC3A01T8TA

• Fet Type: 2 N and 2 P-Channel (H-Bridge)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 15V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (8 leads), SM8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMHC3A01T8TA; ZXMHC3A01T8TR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer
(d) For device with one active die.
ZXMHC3A01T8
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
to transient thermal impedance graph.
S E M I C O N D U C T O R S
(c)
(a) (d)
(b) (d)
A
A
=25°C
=25°C
(V
(V
GS
GS
GS
= 10V; T
= 10V; T
= 10V; T
(b) (d)
(a) (d)
(c)
A
A
A
=25°C)
=70°C)
=25°C)
(b)
(b)(d)
10 sec.
(b)(d)
(a)(d)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
, T
JA
JA
stg
N-Channel
14.5
14.5
±20
3.1
2.5
2.7
2.3
30
-55 to +150
VALUE
10.4
13.6
1.3
1.7
96
73
DRAFT ISSUE E - APRIL 2004
P-channel
-10.8
-10.8
±20
-2.3
-1.8
-2.0
-2.2
-30
UNIT
°C/W
°C/W
mW/°C
mW/°C
UNIT
°C
W
W
V
V
A
A
A
A
A
A