ZXMHC3A01T8TA Diodes Zetex, ZXMHC3A01T8TA Datasheet - Page 4

MOSFET H-BRIDGE DUAL SOT223-8

ZXMHC3A01T8TA

Manufacturer Part Number
ZXMHC3A01T8TA
Description
MOSFET H-BRIDGE DUAL SOT223-8
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMHC3A01T8TA

Fet Type
2 N and 2 P-Channel (H-Bridge)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A, 2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.9nC @ 15V
Input Capacitance (ciss) @ Vds
190pF @ 25V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (8 leads), SM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMHC3A01T8TA
ZXMHC3A01T8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMHC3A01T8TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXMHC3A01T8TA
Quantity:
1 000
N-channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC3A01T8
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
4
2%.
MIN.
1.0
30
TYP.
17.7
13.0
190
3.5
1.7
2.3
6.6
2.9
3.9
0.6
0.9
38
20
MAX. UNIT CONDITIONS
0.12
0.18
0.95
100
1.0
3.0
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
DRAFT ISSUE E - APRIL 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250 A, V
= 2.5A
=25°C, I
=25°C, I
≅ 6.0Ω, V
=30V, V
=4.5V, I
= 25V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
S
S
= 1.7A,
= 2.5A,
D
GS
D
D
D
GS
GS
GS
= 2.5A
= 2.5A
= 2.5A
DS
GS
DS
= 2.0A
=0V
=0V
= 10V
= 10V
=0V
=V
=0V
GS

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