ZXMHC3A01T8TA Diodes Zetex, ZXMHC3A01T8TA Datasheet - Page 7

• Manufacturer Part Number: ZXMHC3A01T8TA
• Description: MOSFET H-BRIDGE DUAL SOT223-8
• Manufacturer: Diodes Zetex

Specifications of ZXMHC3A01T8TA

• Fet Type: 2 N and 2 P-Channel (H-Bridge)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 15V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (8 leads), SM8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMHC3A01T8TA; ZXMHC3A01T8TR

DRAFT ISSUE E - APRIL 2004
P-channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
7
2%.
MIN.
-1.0
-30
-0.85
TYP.
39.8
25.8
12.1
204
2.5
1.2
2.3
7.5
2.6
5.2
0.7
0.9
19
15
MAX. UNIT CONDITIONS
-0.95
0.21
0.33
-1.0
-3.0
100
ZXMHC3A01T8
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= -250 A, V
= -250 A, V
= -1.4A
= -1.4A
=25°C, I
=25°C, I
≅ 6.0 , V
= -30V, V
= -15V, I
= -15V, V
= -15V, V
= -15V, V
=±20V, V
= -10V, I
= -4.5V, I
= -15V, I
=0V
S E M I C O N D U C T O R S
S
S
= -1.1A,
= -0.95A,
D
D
D
GS
DS
GS
D
GS
GS
GS
= -1.4A
= -1.4A
= -1A
GS
DS
= -1.1A
= -10V
=0V
=0V
=0V
= -5V
= -10V
=V
=0V
GS