SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet
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SI7983DP-T1-E3
Specifications of SI7983DP-T1-E3
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SI7983DP-T1-E3 Summary of contents
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... S1 6. Bottom View Ordering Information: Si7983DP-T1-E3 (Lead (Pb)-free) Si7983DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si7983DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... S09-0272-Rev. B, 16-Feb-09 6000 5000 4000 3000 2000 1000 1.6 1.4 1.2 1.0 0.8 0 0.06 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si7983DP Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 100 - T Junction T emperature ( °C) J On-Resistance vs. Junction Temperature ...
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... Si7983DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 600 µA D 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on on) 1 Limited ° ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72637. Document Number: 72637 S09-0272-Rev. B, 16-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7983DP Vishay Siliconix - www.vishay.com 5 ...
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... TYP. 3.98 TYP. 6.15 6.25 5.89 5.99 3.66 3.84 3.78 3.91 0.75 TYP. 1.27 BSC 1.27 TYP 0.61 0.71 0.61 0.71 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN ...
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... The minimum land pattern recommended to take full advantage of the PowerPAK thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Sili- conix MOSFETs. Click on the PowerPAK SO-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...
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... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 24 mils. This matches the spacing of the two drain pads on the Pow- erPAK SO-8 dual package ...
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... No significant effect was observed Si7446DP 41 36 100 10000 0.00 Figure 6. Spreading Copper Junction-to-Ambient Performance AN821 Vishay Siliconix R vs. Spreading Copper 100 % Back Copper) 100 % 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2 ...
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... AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J Figure 7. MOSFET r vs. Temperature DS(on) A MOSFET generates internal heat due to the current passing through the channel ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index www.vishay.com 16 ® SO-8 Dual 0.260 (6.61) 0.150 (3.81) 0.024 (0.61) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) 0.040 (1.02) Document Number: 72600 ...
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