SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7983DP-T1-E3
• Description: MOSFET DUAL P-CH 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7983DP-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 1V @ 600µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7983DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0
0.0
0
V
GS
V
I
D
Source-Drain Diode Forward Voltage
DS
5
= 1.8 V
10
= 12 A
0.2
On-Resistance vs. Drain Current
= 10 V
V
SD
Q
g
I
10
D
-
20
-
T
0.4
-
J
Source-to-Drain Voltage (V)
Total Gate Charge (nC)
= 150 °C
Gate Charge
Drain Current (A)
15
30
0.6
20
40
0.8
T
J
V
V
= 25 °C
GS
GS
= 2.5 V
= 4.5 V
25
50
1.0
30
60
1.2
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
-
0
50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
I
D
-
rss
V
I
= 4.1 A
D
25
GS
= 12 A
V
V
1
= 4.5 V
4
GS
DS
T
J
0
-
-
-
Gate-to-Source V oltage (V)
Junction T emperature ( °C)
Drain-to-Source Voltage (V)
2 5
Capacitance
2
8
I
C
D
C
iss
oss
= 12 A
5 0
Vishay Siliconix
12
3
7 5
Si7983DP
www.vishay.com
100
16
4
125
150
20
5
3