SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 2
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SI7983DP-T1-E3
Manufacturer Part Number
SI7983DP-T1-E3
Description
MOSFET DUAL P-CH 20V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7983DP-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
1V @ 600µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7983DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7983DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7983DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
30
25
20
15
10
5
0
0
a
1
V
a
DS
V
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
J
= 5 thru 2 V
= 25 °C, unless otherwise noted
2
a
Symbol
R
V
3
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
4
V
DS
V
I
1.5 V
1 V
D
DS
≅ - 1 A, V
= - 10 V, V
I
F
= - 20 V, V
V
V
V
V
V
V
V
V
= - 2.9 A, dI/dt = 100 A/µs
V
DS
GS
I
5
DS
GS
GS
DS
S
DD
DS
DS
= - 2.9 A, V
Test Conditions
≥ - 5 V, V
= V
= - 1.8 V, I
= - 4.5 V, I
= - 2.5 V, I
= - 15 V, I
= - 20 V, V
= - 10 V, R
= 0 V, V
GEN
f = 1 MHz
GS
GS
GS
, I
= - 4.5 V, R
= - 4.5 V, I
D
= 0 V, T
GS
GS
= - 600 µA
D
D
D
D
GS
GS
L
= - 4.5 V
= - 4.1 A
= - 12 A
= ± 8 V
= - 12 A
= - 11 A
= 10 Ω
= 0 V
= 0 V
J
D
= 55 °C
g
= - 12 A
30
25
20
15
10
= 6 Ω
5
0
0.00
0.25
V
- 0.40
GS
Min.
0.50
- 30
Transfer Characteristics
- Gate-to-Source Voltage (V)
T
C
25 °C
0.75
= 125 °C
0.014
0.016
0.020
Typ.
- 0.8
12.1
390
190
106
7.2
41
49
35
60
1.00
S09-0272-Rev. B, 16-Feb-09
8
Document Number: 72637
1.25
± 100
0.017
0.020
0.024
Max.
- 55 °C
- 1.2
585
285
160
- 1
- 1
- 5
74
55
90
1.50
1.75
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
2.00