SI4561DY-T1-GE3 Vishay, SI4561DY-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI4561DY-T1-GE3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4561DY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohm @ 10 V @ N Channel or 0.035 Ohm @ 10 V @ P Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4561DY-T1-GE3TR

Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.050
0.044
0.038
0.032
0.026
0.020
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
V
GS
GS
On-Resistance vs. Drain Current
0.5
6
8
V
= 4.5 V
= 10 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 20 V
- Drain Current (A)
Gate Charge
1.0
12
16
V
DS
V
= 10 V
GS
1.5
18
24
= 10 thru 4 V
V
DS
= 30 V
2.0
32
24
3 V
2.5
30
40
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
C
= 5 A
- 25
oss
T
C
6
V
V
= 125 °C
GS
Transfer Characteristics
DS
T
1
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
C
Capacitance
25
12
= 25 °C
C
S09-0220-Rev. C, 09-Feb-09
50
2
iss
Document Number: 69730
18
V
75
GS
= 10 V
T
100
V
C
3
GS
= - 55 °C
24
= 4.5 V
125
150
30
4