IRF7306QTRPBF International Rectifier, IRF7306QTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7306QTRPBF
• Description: MOSFET P-CH DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7306QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7306QTRPBFTR

IRF7306
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
SM
DSS
GSS
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
-1.8A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
90A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.037 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Surface mounted on FR-4 board, t
–––
–––
-30
2.5
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
440
200
4.0
–––
–––
–––
6.0
93
11
17
25
18
53
66
0.10
0.16
-1.0
–––
–––
–––
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
-2.5
-25
2.9
9.0
-14
25
80
99
300µs; duty cycle
V/°C
nH
µA
nA
nC
ns
µC
pF
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead tip
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -1.8A
= -1.8A
= 25°C, I
= 25°C, I
= 6.0
= 8.2
= 0V, ID = -250µA
= -10V, I
= -4.5V, I
= V
= -24V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -24V
= -10V, See Fig. 6 and 12
= -15V
= 0V
= -25V
2%.
GS
, I
See Fig. 10
10sec.
S
F
D
Conditions
D
D
Conditions
= -1.8A, V
= -1.8A
D
GS
GS
= -250µA
= -1.8A
= -1.8A
= -1.5A
= 0V
= 0V, T
D
= -1mA
GS
G
J
= 125°C
= 0V
G
S
+L
D
S
D
S
D
)