IRF7306QTRPBF International Rectifier, IRF7306QTRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7306QTRPBF
• Description: MOSFET P-CH DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7306QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7306QTRPBFTR

V
GS
Re-Applied
Voltage
*
Reverse
Recovery
Current
*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
**
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Ground Plane
Low Stray Inductance
Low Leakage Inductance
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*
IRF7306