IRF7314 International Rectifier, IRF7314 Datasheet - Page 2

• Manufacturer Part Number: IRF7314
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7314

IRF7314
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
r
SM
I
S
rr
DSS
V
fs
GSS
(BR)DSS
GS(th)
oss
g
gs
gd
iss
rss
SD
DS(on)
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
Starting T
Surface mounted on FR-4 board, t
G
= 25 , I
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= 25°C, L = 35mH
AS
= -2.9A.
Parameter
Parameter
10sec.
J
= 25°C (unless otherwise specified)
I
Pulse width
-0.70 –––
Min. Typ. Max. Units
T
Min. Typ. Max. Units
SD
––– 0.049 0.058
––– 0.082 0.098
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.031 –––
–––
–––
–––
–––
-20
––– -0.78 -1.0
J
150°C
-2.9A, di/dt
–––
–––
–––
–––
––– -100
780
470
240
–––
5.9
4.0
7.7
–––
19
15
40
42
49
47
49
–––
–––
-1.0
–––
–––
100
–––
–––
-25
6.1
300µs; duty cycle
29
22
60
63
73
-21
12
-2.5
71
73
-77A/µs, V
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
DD
= -2.9A
= -2.9A
= 25°C, I
= 25°C, I
= 6.0
= 3.4
= 0V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -4.5V, See Fig. 10
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -16V
= 0V
= -15V
= -10V
2%.
V
GS
Conditions
(BR)DSS
, I
D
S
F
D
Conditions
= -250µA
D
= -2.9A
= -2.9A, V
D
D
GS
= -250µA
GS
= -1.5A
,
= -2.9A
= -1.5A
= 0V, T
= 0V
D
= -1mA
GS
J
G
= 55°C
= 0V
D
S