IRF7314 International Rectifier, IRF7314 Datasheet - Page 4

• Manufacturer Part Number: IRF7314
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7314

IRF7314
Fig 7. Typical On-Resistance Vs. Gate
0.08
0.07
0.06
0.05
0.04
0.03
2.0
1.5
1.0
0.5
0.0
Fig 5. Normalized On-Resistance
-60
0.0
I
D
-40
= -2.9A
V
T , Junction T em perature (°C )
G S
Vs. Temperature
-20
J
2.0
, Gate-to-Source Voltage (V)
Voltage
0
2 0
4 0
4.0
6 0
I
D
8 0
= -5.3A
1 0 0 1 2 0 1 4 0 1 6 0
6.0
V
G S
= -4.5V
8.0
A
A
400
300
200
100
Fig 6. Typical On-Resistance Vs. Drain
0.8
0.6
0.4
0.2
0.0
0
25
0
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
4
Vs. Drain Current
J
-I , Drain Current (A)
D
Current
75
8
V
G S
100
1 2
= -2.7V
TOP
BOTTOM
V
G S
125
1 6
= -4.5V
-1.3A
-2.3A
-2.9A
°
I D
150
2 0
A