IRF7314 International Rectifier, IRF7314 Datasheet - Page 5

MOSFET 2P-CH 20V 5.3A 8-SOIC

IRF7314

Manufacturer Part Number
IRF7314
Description
MOSFET 2P-CH 20V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7314

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7314

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100
0.1
10
1400
1200
1000
0.00001
800
600
400
200
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Typical Capacitance Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Drain-to-Source Voltage
-V
D S
V
C
C
C
(THERMAL RESPONSE)
0.0001
, D rain-to-S ource V oltage (V )
G S
is s
rs s
oss
SINGLE PULSE
C
C
C
= 0V ,
= C
= C
= C
is s
o s s
rs s
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1M H z
0.001
, C
ds
S H O R TE D
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
10
8
6
4
2
0
0.1
0
I
D
Fig 10. Typical Gate Charge Vs.
= -2.9A
5
Gate-to-Source Voltage
1. Duty factor D = t / t
2. Peak T = P
Q , Total Gate Charge (nC)
Notes:
G
10
1
J
V
D S
DM
15
x Z
= -16V
1
thJA
IRF7314
P
2
DM
+ T
20
10
A
t
1
t
2
25
30
100
A

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