SSM6L35FE(TE85L,F) Toshiba, SSM6L35FE(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: SSM6L35FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .18A ES6
• Manufacturer: Toshiba

Specifications of SSM6L35FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 100mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 9.5pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6L35FE(TE85LF)TR

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Marking
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Drain–source forward voltage
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Drain–source forward voltage
Note 2: Pulse test
1
6
LL3
5
2
Characteristics
Characteristics
4
3
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Equivalent Circuit
V
V
R
R
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
(BR) DSS
(BR) DSS
DS (ON)
DS (ON)
⏐Y
V
⏐Y
V
I
I
C
I
I
C
C
C
C
C
GSS
GSS
DSS
DSS
V
V
t
t
t
t
DSF
DSF
oss
on
off
oss
on
off
rss
rss
iss
iss
th
fs
th
fs
⏐
⏐
6
1
V
I
V
V
V
I
I
I
I
V
V
V
I
V
I
V
V
V
I
I
I
I
V
V
V
I
Q1
D
D
D
D
D
D
D
D
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 50 mA, V
= 50 mA, V
= 5 mA, V
= 5 mA, V
= - 180 mA, V
= -0.1 mA, V
= -50 mA, V
= -50 mA, V
= -5 mA, V
= -2 mA, V
= 100 mA, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= -20 V, V
= -3 V, I
= -3 V, I
= -3 V, V
= ±10 V, V
= 3 V, I
= 0 to 2.5 V
= ±10 V, V
= -3 V, I
= 0 to -2.5 V
5
2
2
Q2
(top view)
D
D
D
Test Condition
Test Condition
GS
GS
D
D
GS
D
GS
GS
4
3
GS
GS
GS
= 1 mA
= 50 mA
GS
= 50 mA,
GS
GS
GS
GS
= -1 mA
= -50 mA
= -50 mA,
GS
GS
DS
DS
= 1.5 V
= 1.2 V
= 0V, f = 1 MHz
GS
= -1.5 V
= -1.2 V
= 0 V, f = 1 MHz
= 4 V
= 2.5 V
= 0V
= 0V
= -4 V
= -2.5 V
= 0 V
= 0 V
= 0 V
= 0V
= 0 V
= 0V
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
115
-0.4
Min
Min
0.4
-20
20
77
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
12.2
10.4
0.83
-0.9
115
300
175
251
1.5
9.5
4.1
9.5
4.3
5.6
8.2
6.5
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
3
5
SSM6L35FE
2008-03-21
Max
Max
±10
-1.2
±10
-1.0
1.0
1.2
20
11
22
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
1
3
4
8
8
Unit
Unit
mS
mS
μA
μA
μA
pF
μA
pF
ns
ns
Ω
Ω
V
V
V
V
V
V