SSM6L35FE(TE85L,F) Toshiba, SSM6L35FE(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: SSM6L35FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .18A ES6
• Manufacturer: Toshiba

Specifications of SSM6L35FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 100mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 9.5pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6L35FE(TE85LF)TR

Q2 (P-ch MOSFET)
-200
-100
-250
-150
-50
0
20
15
10
20
15
10
5
0
5
0
-1
0
0
-2.5 V
-1.5 V
V GS = -1.2 V
-4 V
Drain–source voltage V
Gate–source voltage V
-2
-0.5
Drain current I
-10
R
R
DS (ON)
DS (ON)
-4
I
-10V
D
– V
-1
DS
– V
– I
-4V
D
D
-6
GS
-100
25℃
Common Source
I D = -5 mA
(mA)
Common Source
Ta = 25°C
DS
GS
Common Source
Ta = 25°C
-1.5
-2.5V
V GS =-1.2V
(V)
-8
(V)
Ta=100℃
-25℃
-1.8V
-1.5V
-1000
-10
-2
6
-1000
-0.01
-100
10
15
-0.1
5
-10
20
15
10
0
-1
5
0
−50
0
0
Common Source
V DS = -3V
Common Source
25°C
Ta = 100°C
Gate–source voltage V
Gate–source voltage V
Ambient temperature Ta (°C)
-2
0
−25°C
R
-1
DS (ON)
R
-4
DS (ON)
I
D
– V
50
– V
GS
– Ta
V GS =−1.2 V, ID=-2mA
-6
GS
Common Source
I D = -50 mA
-2
GS
25℃
GS
100
-2.5 V, -50mA
SSM6L35FE
-1.5 V, -5mA
-4V, -50mA
-8
(V)
(V)
Ta=100℃
2008-03-21
-25℃
-10
150
-3