SSM6P36FE(TE85L,F) Toshiba, SSM6P36FE(TE85L,F) Datasheet

SSM6P36FE(TE85L,F)

Manufacturer Part Number

SSM6P36FE(TE85L,F)

Description

MOSFET DUAL P-CH 20V .33A ES6

Manufacturer

Toshiba

Datasheet

1.SSM6P36FETE85LF.pdf (5 pages)

Specifications of SSM6P36FE(TE85L,F)

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.31 Ohm @ 100mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

330mA

Vgs(th) (max) @ Id

1V @ 1mA

Gate Charge (qg) @ Vgs

1.2nC @ 4V

Input Capacitance (ciss) @ Vds

43pF @ 10V

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

ES6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SSM6P36FE(TE85LF)TR

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○ Power Management Switches

•

Absolute Maximum Ratings (Ta = 25 °C)

(Common to the Q1, Q2)

Marking

Handling Precaution

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

SSM6P36FE). Then, for normal switching operation, V

th.

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

Let V

Take this into consideration when using the device.

1.5-V drive

Low ON-resistance:

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

Note 1: Total rating

This relationship can be expressed as: V

be the voltage applied between gate and source that causes the drain current (I

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Pulse

= 3.60 Ω (max) (@V

= 2.70 Ω (max) (@V

= 1.60 Ω (max) (@V

= 1.31 Ω (max) (@V

SSM6P36FE

Symbol

GSS

DSS

(Note1)

stg

GS(off)

Equivalent Circuit

< V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

GS(on)

−55 to 150

Rating

< V

-330

-660

150

-20

±8

GS(on).

must be higher than V

× 6)

Unit

°C

(top view)

th,

Weight: 3.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

and V

ES6

) to below (−1 mA for the

GS(off)

1.Source1

2.Gate1

3.Drain2

must be lower than

1.2±0.05

SSM6P36FE

1.6±0.05

2-2N1D

2008-06-05

―

4.Source2

5.Gate2

6.Drain1

Unit: mm

Related parts for SSM6P36FE(TE85L,F)

SSM6P36FE(TE85L,F) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ Power Management Switches • 1.5-V drive • = 3.60 Ω (max) (@V Low ON-resistance 2.70 Ω (max) (@ 1.60 Ω (max) (@ 1.31 Ω (max) (@ Absolute Maximum Ratings ( °C) (Common to the Q1, Q2) Characteristics Drain-source voltage Gate-source voltage ...

Page 2

Electrical Characteristics Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off time ...

Page 3

I – -700 Common Source -8V -4.5V -2. °C -600 -500 -400 -300 -200 V GS =-1.2 V -100 0 0 -0.5 -1.0 Drain-source voltage – (ON ...

Page 4

1000 Common Source 25°C 300 100 30 10 -100 -1 -10 Drain current I (mA – 100 Common Source ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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