TPCF8303(TE85L,F) Toshiba, TPCF8303(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: TPCF8303(TE85L,F)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8303(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 860pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8303(TE85L,F); TPCF8303FTR

10000
1000
240
200
160
120
100
1.6
2.0
1.2
0.8
0.4
80
40
10
-0.1
−80
1
0
0
0
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
Common Source
Pulse Test
V GS = -1.8V
V GS = -2.5V
V GS = -4.5V
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
ｔ＝5S
Capacitance – V
-1
0
R
DS (ON)
P
D
I D = -3A
I D =-0.75A
-3
80
40
– Ta
-5
– Ta
I D = -3A
-10
C iss
80
DS
C rss
C oss
-1.5A
-1.5A
120
-0.75A
-3A,-1.5A
120
-30
-0.75A
-50
-100
160
160
5
-0.5
-0.3
-0.1
-2.0
-1.6
-1.2
-0.8
-0.4
-20
-16
-12
-10
-5
-3
-1
-8
-4
−80
0
0
0
0
-4
-8
V DS
Common Source
V DS = -10 V
I D = -200μA
Pulse Test
V DD = -16V
-4.5
−40
0.2
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
4
Dynamic input / output
0.4
-2.5
0
characteristics
I
DR
V
V DD =-4V
th
-1.8
0.6
– V
40
-16
8
– Ta
-1.0
DS
0.8
80
Common source
I D = -3 A
Ta = 25°C
Pulse Test
Common Source
V GS = 0 V
Ta = 25°C
Pulse Test
-8
12
TPCF8303
V GS
120
2006-11-16
1.0
160
1.2
16
-10
-8
-6
-4
-2
0