BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 4

• Manufacturer Part Number: BSO612CV G
• Description: MOSFET N/P-CH 60V 2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO612CV G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.0 A-2.0 A
• Idpuls (max): 12.0 A-8.0 A
• Rds (on) (max) (@10v): 120.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO612CV G; BSO612CVGINTR; BSO612CVGT; BSO612CVGXT; BSO612CVT; BSO612CVXTINTR; BSO612CVXTINTR; SP000216307

Electrical Characteristics, at T
Parameter
Characteristics
Gate to source charge
V
V
Gate to drain charge
V
V
Gate charge total
V
V
Gate plateau voltage
V
V
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
V
Reverse recovery time
V
V
Reverse recovery charge
V
V
DD
DD
DD
DD
DD
DD
DD
DD
A
A
GS
GS
R
R
R
R
= 25 °C
= 25 °C
= 30 V, I
= -30 V, I
= 30 V, I
= -30 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 48 V, I
= -48 V, I
= 0 V, I
= 0 V, I
F =
F =
F
F
F =
D
D
D
D
F =
= I
= I
D
D
D
D
l
l
S
S
l
= 3 A
= 3 A
= 3 A, V
= 3 A
S
l
= -2 A
= -2 A
= -2 A, V
= -2 A
, d i
S
S
S
, d i
, d i
, d i
F
F
/d t = 100 A/µs
F
F
/d t = 100 A/µs
/d t = -100 A/µs
/d t = -100 A/µs
GS
GS
= 0 to 10V
= 0 to -10V
j
= 25 °C, unless otherwise specified
Rev. 2.0
Page 4
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Symbol
Q
Q
Q
V
I
I
V
t
Q
S
SM
rr
(plateau)
SD
rr
gs
gd
g
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
10.3
10.5
-0.9
5.5
4.5
0.9
55
55
90
65
-4
1
2
5
-
-
-
-
BSO 612 CV G
2006-08-25
max.
15.5
-1.2
135
100
1.5
8.3
6.8
1.2
12
85
85
16
-2
-8
3
3
-
-
Unit
nC
V
A
V
ns
nC