BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 6

• Manufacturer Part Number: BSO612CV G
• Description: MOSFET N/P-CH 60V 2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO612CV G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.0 A-2.0 A
• Idpuls (max): 12.0 A-8.0 A
• Rds (on) (max) (@10v): 120.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO612CV G; BSO612CVGINTR; BSO612CVGT; BSO612CVGXT; BSO612CVT; BSO612CVXTINTR; BSO612CVXTINTR; SP000216307

Safe operating area (N-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (N-Ch.)
Z
parameter : D = t
D
thJC
K/W
= f ( V
10
10
10
10
10
10
10
10
10
10
A
-1
-2
-1
-2
2
1
0
= f ( t
2
1
0
10
10
BSO 612 CV
BSO 612 CV
-1
-5
DS
10
p
)
single pulse
)
-4
10
-3
p
10
10
/ T
0
-2
A
10
= 25 °C
-1
10
0
10
10
1
1
10
D = 0.50
Rev. 2.0
2
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 45.0µs
p
DS
s
100 µs
1 ms
10 ms
10
10
2
4
Page 6
Safe operating area (P-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (P-Ch.)
Z
parameter : D = t
D
K/W
thJC
= f ( V
-10
-10
-10
-10
10
10
10
10
10
A
-1
-2
-1
-2
= f ( t
1
0
2
1
0
-10
10
BSO 612 CV
BSO 612 CV
-5
DS
-1
p
10
)
single pulse
)
-4
10
-3
p
-10
10
/ T
-2
0
A
10
= 25 °C
-1
10
0
BSO 612 CV G
-10
10
1
2006-08-25
1
10
D = 0.50
2
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 200.0µs
p
DS
s
1 ms
10 ms
-10
10
4
2